For the PDF version of this article, click here. Protecting power transistors against overcurrent failure has always been a challenging issue in power circuit design. In order to protect against even ...

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection ...

SIC1181KQ and SIC1182KQ are single-channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8-A ...

ST’s galvanically isolated automotive gate driver for SiC MOSFETs and IGBTs gives flexibility to control inverters of different power ratings featuring programmable protections and diagnostics that ...

Silicon-carbide (SiC) MOSFETs have made significant inroads in the power semiconductor industry thanks to a range of benefits over silicon-based switches. These include faster switching, higher ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

Based on several high-power applications, we can see a clear trend of using power modules and discrete MOSFETs. There is a significant overlap between both, roughly from 10 kW to 50 kW. Modules fit ...

Kyoto, Japan and Santa Clara, CA, June 17, 2020 (GLOBE NEWSWIRE) -- ROHM announces the cutting-edge 4 th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main ...

GENEVA, SWITZERLAND, November 7, 2024 /EINPresswire.com/ -- STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches ...

GENEVA, SWITZERLAND, November 7, 2024 /EINPresswire / -- STMicroelectronics' STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST's latest robust galvanic ...

STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized desaturation protection ...